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“Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”

2023-08-24
조회수 151

Soo-Hyun Kim, Ki-Tae Kim, Arindom Datta, Hyun-Mi Kim, Ki-Bum Kim, Dae-Hwan Kang, “Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”, J. Vac. Sci. Technol. vol. B 21, no. 2, p. 804 (2003).


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Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

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Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel