“Lower voltage operations of a phase change memory device with a highly resistive TiON layer” : Chalcogenide Semiconductor Lab

2004 Paper

2023-08-24

Dae-Hwan Kang, Dong-Ho Ahn, Min-Ho Kwon, Hyuk-Soon Kwon, Ki-Bum Kim, Kyeong Seok Lee, and Byung-ki Cheong, “Lower voltage operations of a phase change memory device with a highly resistive TiON layer”, Jpn. J. Appl. Phys. Part I vol. 43, no. 8A, p. 5243 (2004).

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“Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge” “The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film”

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