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“Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material”

2023-08-24
조회수 199

Byung-ki Cheong, In Ho Kim, Hanju Jung, Taek Sung Lee, Jeung-hyun Jeong, Dae-Hwan Kang, Won Mok Kim, and Jae-Geun Ha “Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material” Electronic Materials Letters vol. 2, no. 1, pp. 43 – 48 (2006).


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Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

All rights reserved | Designed by greypixel


Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel