mobile background

“An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode”

2023-08-24
조회수 166

Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, Dong-Bok Lee, Hyun-Mi Kim, Ki-Bum Kim, and Soo-Hyun Kim “An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode” J. Appl. Phys. vol. 100, no.5 054506-1~9 (2006.9).


0 0

Address

Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

All rights reserved | Designed by greypixel


Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel