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"Characteristics of plasma-enhanced atomic layer deposited RuSiN as a diffusion barrier against Cu"

2023-08-24
조회수 163

Tae-Kwang Eom, Soo-Hyun Kim, Dae-Hwan Kang, and Hoon Kim, "Characteristics of plasma-enhanced atomic layer deposited RuSiN as a diffusion barrier against Cu" Journal of The Electrochemical Society Vol. 158, No. 11 D657-D663, 2011 (2011).

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Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

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Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel