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“Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode”

2023-08-24
조회수 265

Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, and Ki-Bum Kim, “Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode” IEEE Proceedings of Non-Volatile Semiconductor Memory Workshop (Feb. 12th – 16th, Monterey, CA, USA) pp. 90-91 (2006).

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Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

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Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel