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"Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology"

2023-08-24
조회수 468

J.H. Oh, J.H. Park, Y.S. Lim†, H.S. Lim†, Y.T. Oh, J.S. Kim, J.M. Shin, J.H. Park, Y.J. Song, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, J.H. Kim, J. Yu, F. Yeung, C.W. Jeong, J.H. Kong, D.H. Kang, G.H. Koh, G.T. Jeong, H.S. Jeong, and Kinam Kim, " Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology ", IEEE 2006 International Electron Devices Meeting (11-13 December, 2006)

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Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

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Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel