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“High speed phase change random access memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 complete solid solution”

2023-08-24
조회수 405

Dong-Ho Ahn, Tae-Yon Lee, Dong-Bok Lee, Sung-Soo Yim, Jung-Sub Wi, Kyung-Bae Jin, Min-Hyun Lee, Ki-Bum Kim, Dae-Hwan Kang, Han-ju Jeong, and Byung-ki Cheong, “High speed phase change random access memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 complete solid solution” Jpn. J. Appl. Phys. Vol. 46, pp. 5719 – 5723 (2007.9).


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Address

Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

All rights reserved | Designed by greypixel


Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel